Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 650V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 776916-IPP65R095C7XK
Series: CoolMOS C7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: IPP65R095C7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO-220-3
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 590μA
Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2140pF @ 400V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 128W (Tc)
Rds On (Maximum) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Alternative Parts (Cross-Reference): STP42N65M5; STP40N60M2; STP42N60M2-EP; STP34N65M5;
Introduction Date: October 11, 2013
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 24A TO220-3 Product overview: IPP65R095C7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 24A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP65R095C7XKSA1
MOSFET N-CH 650V 24A TO220-3
MOSFET, N-CH, 650V, 24A, 150DEG C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 650V 24A TO220-3
| Rochester Electronics | DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPP65R095C7XKSA1 | IPP65R095C7XKSA1-ND | 776916-IPP65R095C7XKSA1 | 2583899 | 278-IPP65R095C7XKSA1 | IPP65R095C7XKSA1 | 13AC9084 | IPP65R095C7XKSA1 | IPP65R095C7XKSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R095C7XKSA1 | MOSFETs | 650V 24A TO220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 24A, 150Deg C, 128W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| rDS(on) | 0.0950 ohms | ||||||||
| Package Type | PG-TO22-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220 | Tube | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 | |
| Packing Method | Tube; Tube | Tube; Tube | Tube | Tube; Tube | |||||
| PD | 128000 milliwatts | 128 milliwatts | 128000 milliwatts |
