The IPP65R095C7 is a 650V CoolMOS C7 superjunction MOSFET in a PG-TO-220 package, designed for high-efficiency power conversion in applications such as PFC stages, server, telecom, UPS, and solar systems. It features a maximum on-state resistance of 95 mΩ, a peak drain current of 100 A, and a gate charge of 45 nC. The device supports a maximum junction temperature of 150°C, with a thermal resistance from junction to case of 0.98°C/W. It is qualified for industrial-grade applications according to JEDEC standards (J-STD-20 and JESD22), includes Pb-free plating and halogen-free mold compound, and is rated for a gate-source voltage of ±20 V static and ±30 V dynamic. The MOSFET exhibits high dv/dt ruggedness up to 100 V/ns and a body diode di/dt of 60 A/µs.
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186349-IPP65R095C7
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFETs HIGH POWER_NEW Product overview: IPP65R095C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R095C7 can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP65R095C7 | 1186349-IPP65R095C7 | 2088-IPP65R095C7 | IPP65R095C7 |
| Product Name | 500V-950V N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R095C7 | MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0950 ohms | |||
| QG | 45 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) |
