Manufacturer: Infineon Technologies
Win Source Part Number: 776915-IPP65R074C6XK
Series: CoolMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc)
Family Name: IPP65R074C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO-220-3
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 1.4mA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3020pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 480.8W (Tc)
Rds On (Maximum) @ Id, Vgs: 74 mOhm @ 13.9A, 10V
Alternative Parts (Cross-Reference): STP34N65M5; STP57N65M5; SiHP28N65EF-GE3; IXTP34N65X2;
Introduction Date: September 14, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 57.7A TO220-3 Product overview: IPP65R074C6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 57.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 57.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP65R074C6XKSA1
N-Channel 650V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 650V 57.7A TO220-3
MOSFET N-CH 650V 57.7A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 776915-IPP65R074C6XKSA1 | 278-IPP65R074C6XKSA1 | IPP65R074C6XKSA1-ND | IPP65R074C6XKSA1 | IPP65R074C6XKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R074C6XKSA1 | 650V 57.7A TO220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| PD | 480800 milliwatts | 480800 milliwatts | 480800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | 3020 pF @ 100 V | TO-220; TO-220-3 |
| Packing Method | Tube; Tube | Tube | Tube; Tube |
