Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R065C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET
  • 500V-950V N-Channel Power MOSFET - IPP65R065C7 - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IPP65R065C7 - 1186347-IPP65R065C7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPP65R065C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP65R065C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP65R065C7
500V-950V N-Channel Power MOSFET IPP65R065C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSS169 | N-Channel Depletion Mode MOSFET

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • LED strips and signage

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSS169 |
    N-Channel Depletion Mode MOSFET
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
2088-IPP65R065C7
MOSFET Transistor 2088-IPP65R065C7
MOSFETs HIGH POWER_NEW Product overview: IPP65R065C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R065C7 can be used for catalog matching and distributor lookup.

MOSFETs HIGH POWER_NEW Product overview: IPP65R065C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R065C7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Electronic Surplus - IPP65R065C7 - 1186347-IPP65R065C7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPP65R065C7
1186347-IPP65R065C7
Electronic Surplus - IPP65R065C7 1186347-IPP65R065C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186347-IPP65R065C7 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186347-IPP65R065C7
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now
Single FETs, MOSFETs - IPP65R065C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP65R065C7
Single FETs, MOSFETs IPP65R065C7
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP65R065C7 2088-IPP65R065C7 1186347-IPP65R065C7 IPP65R065C7
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor Electronic Surplus - IPP65R065C7 Single FETs, MOSFETs
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0650 ohms
QG 64 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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