Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R060CFD7

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPP65R060CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Applications DIN rail power supplies EV charging Photovoltaic Server power supply units (PSU) Telecommunication infrastructure Designers who used this product also designed with 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 1 2