Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R045C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Connected and smart lighting for IoT DIN rail power supplies Designers who used this product also designed with IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET
  • 500V-950V N-Channel Power MOSFET - IPP65R045C7 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R045C7 - 1186346-IPP65R045C7 - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 8977582 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 8977582P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1458733 - RS Components, Ltd.
    RS Components, Ltd.
  • Transistors - IPP65R045C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Connected and smart lighting for IoT DIN rail power supplies Designers who used this product also designed with IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP65R045C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP65R045C7
500V-950V N-Channel Power MOSFET IPP65R045C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Connected and smart lighting for IoT DIN rail power supplies Designers who used this product also designed with IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • Connected and smart lighting for IoT
  • DIN rail power supplies

Designers who used this product also designed with


  • IRLML5103 |
    P-Channel Power MOSFET
  • IPP045N10N3 G |
    N-Channel Power MOSFET
  • IRLML5103 |
    P-Channel Power MOSFET
  • IPP045N10N3 G |
    N-Channel Power MOSFET
  • IRLML5103 |
    P-Channel Power MOSFET
  • IPP045N10N3 G |
    N-Channel Power MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R045C7 - 1186346-IPP65R045C7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R045C7
1186346-IPP65R045C7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R045C7 1186346-IPP65R045C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186346-IPP65R045C7 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186346-IPP65R045C7
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now
MOSFETs - 8977582 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8977582
MOSFETs 8977582
MOSFET N-Channel 650V 46A CoolMOS TO220

MOSFET N-Channel 650V 46A CoolMOS TO220

Supplier's Site
MOSFETs - 8977582P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8977582P
MOSFETs 8977582P
MOSFET N-Channel 650V 46A CoolMOS TO220

MOSFET N-Channel 650V 46A CoolMOS TO220

Supplier's Site
MOSFETs - 1458733 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1458733
MOSFETs 1458733
MOSFET N-Channel 650V 46A CoolMOS TO220

MOSFET N-Channel 650V 46A CoolMOS TO220

Supplier's Site
Transistors - IPP65R045C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPP65R045C7
Transistors IPP65R045C7
MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP65R045C7
MOSFET IPP65R045C7
MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP65R045C7 1186346-IPP65R045C7 8977582 8977582P IPP65R045C7 IPP65R045C7
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R045C7 MOSFETs MOSFETs Transistors MOSFET
Polarity N-Channel; N N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0450 ohms
QG 93 nC
TJ -55 to 150 C (-67 to 302 F)
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