The IPP65R041CFD7 is a 650V CoolMOS™ CFD7 superjunction MOSFET for resonant topologies like LLC and ZVS in industrial applications. It is packaged in a PG-TO220-3 with a maximum continuous drain current of 53 A at TC=150°C and a pulsed drain current of 211 A. Its maximum RDS(on) is 41 mΩ at TJ=25°C, with a total gate charge of 102 nC. The built-in fast body diode supports a maximum di/dt of 1300 A/µs. Thermal resistance from junction to case is 0.55 °C/W, and the device operates from -55°C to 150°C. It is fully qualified according to JEDEC for industrial use. Gate-source voltage is rated ±20 V static and ±30 V dynamic.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPP65R041CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0410 ohms |
| QG | 102 nC |
