Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R520E6 IPP60R520E6

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069077-IPP60R520E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 3.5V @ 230μA Max Gate Charge: 23.4nC @ 10V Max Input Capacitance: 512pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069077-IPP60R520E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 3.5V @ 230μA Max Gate Charge: 23.4nC @ 10V Max Input Capacitance: 512pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R520E6 - 069077-IPP60R520E6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R520E6
069077-IPP60R520E6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R520E6 069077-IPP60R520E6
Manufacturer: Infineon Technologies Win Source Part Number: 069077-IPP60R520E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 3.5V @ 230μA Max Gate Charge: 23.4nC @ 10V Max Input Capacitance: 512pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069077-IPP60R520E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 66W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 230μA
Max Gate Charge: 23.4nC @ 10V
Max Input Capacitance: 512pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069077-IPP60R520E6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R520E6
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 66000 milliwatts
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