Infineon Technologies AG Single FETs, MOSFETs IPP08CN10N G

The IPP08CN10N G is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, housed in a PG-TO220-3 package. It has a maximum drain-source voltage of 100 V, continuous drain current of 95 A at 25 °C, and a drain-source on-resistance of up to 8.5 mΩ. The device supports an operating junction temperature up to 175 °C and dissipates up to 167 W at 25 °C. Thermal resistance from junction to case is 0.9 K/W. It meets RoHS compliance and is qualified according to JEDEC standards. The gate-source voltage rating is ±20 V, and it features low gate charge and excellent figure of merit for switching performance.