Infineon Technologies AG N-Channel Power MOSFET IPP020N08N5

Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes
  • N-Channel Power MOSFET - IPP020N08N5 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N08N5 - 1186281-IPP020N08N5 - Win Source Electronics
    Win Source Electronics
  • Transistors - IPP020N08N5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPP020N08N5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPP020N08N5
N-Channel Power MOSFET IPP020N08N5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW60R018CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPW60R018CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPW60R018CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPW60R018CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N08N5 - 1186281-IPP020N08N5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N08N5
1186281-IPP020N08N5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N08N5 1186281-IPP020N08N5
Manufacturer: Infineon Technologies Win Source Part Number: 1186281-IPP020N08N5 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186281-IPP020N08N5
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

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ERSAELECTRONICS PTE. LTD.
Singapore
80V 120A TO220 MOSFET Transistor
2088-IPP020N08N5
80V 120A TO220 MOSFET Transistor 2088-IPP020N08N5
MOSFETs N-Ch 80V 120A TO220-3 Product overview: IPP020N08N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP020N08N5 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 80V 120A TO220-3 Product overview: IPP020N08N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP020N08N5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IPP020N08N5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPP020N08N5
Transistors IPP020N08N5
MOSFET N-Ch 80V 120A TO220-3

MOSFET N-Ch 80V 120A TO220-3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP020N08N5
MOSFET IPP020N08N5
MOSFET N-Ch 80V 120A TO220-3

MOSFET N-Ch 80V 120A TO220-3

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Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP020N08N5 1186281-IPP020N08N5 2088-IPP020N08N5 IPP020N08N5 IPP020N08N5
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N08N5 80V 120A TO220 MOSFET Transistor Transistors MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0020 ohms
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-220; PG-TO220-3 SOT3 Tube
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