Win Source Part Number: 1278373-IPN95R3K7P7A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPN95R3K7P7ATMA1CT,I
Base Product Number: IPN95R3
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 950V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223
N-Channel 950V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223
N-Channel 950V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223
MOSFET N-CH 950V 2A SOT223 Product overview: IPN95R3K7P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 950V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN95R3K7P7ATMA1
MOSFET N-CH 950V 2A SOT223
MOSFET N-CH 950V 2A SOT223
MOSFET, 950V, 2A, 150DEG C, 6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:950V; On Resistance Rds(on):3.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278373-IPN95R3K7P7ATMA1 | IPN95R3K7P7ATMA1TR-ND | 2442273 | 278-IPN95R3K7P7ATMA1 | IPN95R3K7P7ATMA1 | IPN95R3K7P7ATMA1 | IPN95R3K7P7ATMA1 | 71AC0395 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFETs | 950V 2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, 950V, 2A, 150Deg C, 6W; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT3 | TO-261-4, TO-261AA | SOT223; SOT-223 | Tape & Reel (TR) | Surface Mount | TO-261-4, TO-261AA | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 950 volts | 950 volts | ||||||
| PD | 6 milliwatts | 6000 milliwatts |