Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPN95R3K7P7

Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Energy Storage Systems Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPN95R3K7P7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Energy Storage Systems Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPN95R3K7P7 is a 950 V N-channel MOSFET designed for high-efficiency low-power switching applications such as LED lighting, chargers, and industrial power supplies. It is packaged in a PG-SOT223 case measuring 6.30 to 6.70 mm in length and 6.70 to 7.30 mm in width. The device has a maximum drain-source on-state resistance of 3.7 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrates a Zener diode for ESD protection rated at HBM Class 1C. It is qualified for industrial applications per JEDEC standards and supports operation from -55 °C to 150 °C junction temperature. Thermal resistance from junction to case is 19.8 °C/W, and to ambient on a minimal PCB footprint is 160 °C/W.

Datasheet Summary
Powered by GS/AI

The IPN95R3K7P7 is a 950 V N-channel MOSFET designed for high-efficiency low-power switching applications such as LED lighting, chargers, and industrial power supplies. It is packaged in a PG-SOT223 case measuring 6.30 to 6.70 mm in length and 6.70 to 7.30 mm in width. The device has a maximum drain-source on-state resistance of 3.7 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrates a Zener diode for ESD protection rated at HBM Class 1C. It is qualified for industrial applications per JEDEC standards and supports operation from -55 °C to 150 °C junction temperature. Thermal resistance from junction to case is 19.8 °C/W, and to ambient on a minimal PCB footprint is 160 °C/W.

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500V-950V N-Channel Power MOSFET - IPN95R3K7P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPN95R3K7P7
500V-950V N-Channel Power MOSFET IPN95R3K7P7
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Energy Storage Systems Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDB8275F | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs 1EDN7511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 1 2

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.

Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.


Summary of Features

  • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
  • Best-in-class DPAK RDS(on) of 450 mΩ
  • Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability

Benefits

  • Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings, and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns

Potential Applications

  • Lighting
  • Smart meter
  • Mobile phone charger
  • Notebook adaptor
  • AUX power supply
  • Industrial SMPS

Applications

  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • Energy Storage Systems
  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • 2EDR8259X |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • 2EDS8165H |
    Gate driver ICs
  • 1EDN7511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • 2EDR8259X |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • 2EDS8165H |
    Gate driver ICs
  • 1EDN7511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPN95R3K7P7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 3.7 ohms
QG 6 nC
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