Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7 IPN80R2K4P7

Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power
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Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power
Request a Quote
Datasheet
Datasheet Summary
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The IPN80R2K4P7 is an 800V CoolMOS™ P7 N-channel power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, adapters, audio, AUX power, and industrial power. It is packaged in a PG-SOT223 case with dimensions of 6.30-6.70 mm in length, 6.70-7.30 mm in width, and 1.52-1.80 mm in height. The device features a maximum drain-source on-state resistance of 2.4 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and an integrated Zener diode for ESD protection rated at HBM Class 1C. It is fully qualified per JEDEC for industrial applications with a continuous drain current of 2.17 A at TC=150°C, and a maximum junction temperature of 150°C. The thermal resistance from junction to ambient is 160 °C/W on a minimal footprint PCB.

Datasheet Summary
Powered by GS/AI

The IPN80R2K4P7 is an 800V CoolMOS™ P7 N-channel power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, adapters, audio, AUX power, and industrial power. It is packaged in a PG-SOT223 case with dimensions of 6.30-6.70 mm in length, 6.70-7.30 mm in width, and 1.52-1.80 mm in height. The device features a maximum drain-source on-state resistance of 2.4 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and an integrated Zener diode for ESD protection rated at HBM Class 1C. It is fully qualified per JEDEC for industrial applications with a continuous drain current of 2.17 A at TC=150°C, and a maximum junction temperature of 150°C. The thermal resistance from junction to ambient is 160 °C/W on a minimal footprint PCB.

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7 - IPN80R2K4P7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7
IPN80R2K4P7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7 IPN80R2K4P7
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.


Summary of Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Potential Applications

  • Adapter
  • LED
  • Audio
  • Industrial SMPS
  • AUX power
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPN80R2K4P7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 2.4 ohms
QG 7.5 nC
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