The IPN80R2K4P7 is an 800V CoolMOS™ P7 N-channel power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, adapters, audio, AUX power, and industrial power. It is packaged in a PG-SOT223 case with dimensions of 6.30-6.70 mm in length, 6.70-7.30 mm in width, and 1.52-1.80 mm in height. The device features a maximum drain-source on-state resistance of 2.4 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and an integrated Zener diode for ESD protection rated at HBM Class 1C. It is fully qualified per JEDEC for industrial applications with a continuous drain current of 2.17 A at TC=150°C, and a maximum junction temperature of 150°C. The thermal resistance from junction to ambient is 160 °C/W on a minimal footprint PCB.
A new benchmark in efficiency and thermal performance
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPN80R2K4P7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN80R2K4P7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 2.4 ohms |
| QG | 7.5 nC |