Infineon Technologies AG N-Channel SMD 800V 800 V MOSFET Transistor IPN80R2K0P7

IPN80R2K0 - 800V COOLMOS N-CHANN / N-Channel 800 V 3A (Tc) 6.4W (Tc) Surface Mount PG-SOT223-3-1 Product overview: IPN80R2K0P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 800V, 800 V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 800V, 800 V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPN80R2K0P7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1339268-IPN80R2K0P7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: CoolMOS™
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Power Dissipation (Max): 6.4W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-261-3
Supplier Device Package: PG-SOT223-3-1
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
HTSUS: 8542.39.0001
Mfr: Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V