The IPN80R1K2P7 is an 800V CoolMOS™ P7 power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a PG-SOT223 case with a maximum continuous drain current of 4.3 A at TC=25°C and a typical drain-source on-resistance of 1.2 Ω. The gate-source threshold voltage is 3 V with a variation of ±0.5 V. It features integrated ESD protection rated at Class 2 (HBM) and is fully qualified according to JEDEC for industrial applications. Thermal resistance from junction to ambient is 160 °C/W on a minimal footprint PCB.
A new benchmark in efficiency and thermal performance
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features
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| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPN80R1K2P7 | IPN80R1K2P7 |
| Product Name | 500V-950V N-Channel Power MOSFET | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 1.2 ohms | |
| QG | 11 nC |