Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPN70R600P7S

Description
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Identity and Access Management (IAM) System
  • 500V-950V N-Channel Power MOSFET - IPN70R600P7S - Infineon Technologies AG
    Infineon Technologies AG
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Description
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Identity and Access Management (IAM) System
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Datasheet
Datasheet Summary
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The IPN70R600P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive consumer applications such as chargers, adapters, and lighting. It is packaged in a PG-SOT223 with dimensions of 6.30-6.70 mm in length and 6.70-7.30 mm in width. The device has a maximum drain-source on-state resistance of 0.60 Ω, a pulsed drain current of 20.5 A, and a gate charge of 10.5 nC. It features integrated ESD protection rated at class 2 (HBM), low switching losses, and thermal resistance from junction to ambient of 75 °C/W with an optimized footprint. The part meets MSL1 moisture sensitivity level and is qualified for operation from -40 °C to 150 °C.

Datasheet Summary
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The IPN70R600P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive consumer applications such as chargers, adapters, and lighting. It is packaged in a PG-SOT223 with dimensions of 6.30-6.70 mm in length and 6.70-7.30 mm in width. The device has a maximum drain-source on-state resistance of 0.60 Ω, a pulsed drain current of 20.5 A, and a gate charge of 10.5 nC. It features integrated ESD protection rated at class 2 (HBM), low switching losses, and thermal resistance from junction to ambient of 75 °C/W with an optimized footprint. The part meets MSL1 moisture sensitivity level and is qualified for operation from -40 °C to 150 °C.

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500V-950V N-Channel Power MOSFET - IPN70R600P7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPN70R600P7S
500V-950V N-Channel Power MOSFET IPN70R600P7S
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Identity and Access Management (IAM) System

Combining excellent performance and ease-of-use

CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).


Summary of Features

Best-fit performance superjunction technology

  • Enabling lower MOSFET chip temperature
  • Leading to higher e iciency comparedto previous technologies
  • Allowing improved form factors and slim designs

Cost-effective package solution

  • Drop-in replacement for DPAK atcompetitive cost
  • Space savings in designs with lowpower dissipation; enabling smaller form factors
  • Comparable thermal behavior to DPAK

Best-in-class price/performance ratio

  • Attractive price position for high performance technology

Potential Applications

Consumer applications

  • charger
  • Adapter
  • TV power supply
  • Lighting

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Identity and Access Management (IAM) System
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPN70R600P7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.6000 ohms
QG 10.5 nC
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