The IPN70R450P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive consumer applications such as chargers, adapters, and lighting. It is packaged in a PG-SOT223 package measuring 6.30 to 6.70 mm in length and 6.70 to 7.30 mm in width. The device has a maximum drain-source on-state resistance of 0.45 Ω and a pulsed drain current of 26 A. It features an integrated ESD protection diode with HBM class 2 ruggedness, low switching losses, and continuous drain current of 16 A at TC=25°C. Thermal resistance from junction to ambient is 160 °C/W on a minimal footprint and 75 °C/W on a vertical PCB without forced air. The part meets JEDEC standards and is rated for an operating temperature range of -40°C to 150°C.
Combining excellent performance and ease-of-use
CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).
Summary of Features
Best-fit performance superjunction technology
Cost-effective package solution
Best-in-class price/performance ratio
Potential Applications
Consumer applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPN70R450P7S |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.4500 ohms |
| QG | 13.1 nC |
