MOSFET N-CH 700V 12.5A SOT223 Product overview: IPN70R360P7SATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 12.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 12.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN70R360P7SATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 851136-IPN70R360P7SA
Series: CoolMOS™ P7
Features: 700 V
Package: Reel - TR
Family Name: IPN70R360
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP001657468, IPN70R360P7SATMA1CT,
N-Channel 700V 12.5A (Tc) 7.2W (Tc) Surface Mount PG-SOT223
N-Channel 700V 12.5A (Tc) 7.2W (Tc) Surface Mount PG-SOT223
N-Channel 700V 12.5A (Tc) 7.2W (Tc) Surface Mount PG-SOT223
700V CoolMOS P7 Power Transistor
Infineon MOSFET IPN70R360P7SATMA1
MOSFET N-CH 700V 12.5A SOT223
MOSFET, N-CH, 700V, 12.5A, 7.2W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 700V 12.5A SOT223
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPN70R360P7SATMA1 | 851136-IPN70R360P7SATMA1 | IPN70R360P7SATMA1DKR-ND | IPN70R360P7SATMA1 | 2152526P | 2152526 | IPN70R360P7SATMA1 | IPN70R360P7SATMA1 | 93AC7121 | IPN70R360P7SATMA1 |
| Product Name | 700V 12.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPN70R360P7SATMA1 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 700V, 12.5A, 7.2W, Sot-223; Transistor Polarity Infineon | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 700 volts | 700 volts | ||||||||
| PD | 7.2 milliwatts | 7200 milliwatts | ||||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
