The IPN70R2K0P7S is a 700V CoolMOS™ P7 silicon N-channel power MOSFET in a PG-SOT223 package, designed for cost-sensitive consumer applications such as chargers, adapters, and lighting. It features a maximum on-state resistance of 2.0 Ω, a typical gate charge of 3.8 nC, and a pulsed drain current of 5.7 A. The device includes integrated ESD protection rated at HBM Class 1C, and its thermal performance is characterized by a junction-to-ambient resistance of 160 °C/W on a minimal footprint. It supports flyback topologies and offers low switching losses with an energy storage rating of 0.4 µJ at 400 V. The operating junction temperature ranges from -40 °C to 150 °C, and the device meets JEDEC standards for validation.
Combining excellent performance and ease-of-use
CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).
Summary of Features
Best-fit performance superjunction technology
Cost-effective package solution
Best-in-class price/performance ratio
Potential Applications
Consumer applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPN70R2K0P7S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN70R2K0P7S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 2 ohms |
| QG | 3.8 nC |
