Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPN70R2K0P7S IPN70R2K0P7S

Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications General purpose motor drive - variating frequency and voltage Home appliances LED lighting system designs LED strips and signage