Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPN70R1K4P7S

Description
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications Connected and smart lighting for IoT Home appliances
  • 500V-950V N-Channel Power MOSFET - IPN70R1K4P7S - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPN70R1K4P7S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications Connected and smart lighting for IoT Home appliances
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPN70R1K4P7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPN70R1K4P7S
500V-950V N-Channel Power MOSFET IPN70R1K4P7S
Combining excellent performance and ease-of-use CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC). Summary of Features Best-fit performance superjunction technology Enabling lower MOSFET chip temperature Leading to higher e iciency comparedto previous technologies Allowing improved form factors and slim designs Cost-effective package solution Drop-in replacement for DPAK atcompetitive cost Space savings in designs with lowpower dissipation; enabling smaller form factors Comparable thermal behavior to DPAK Best-in-class price/performance ratio Attractive price position for high performance technology Potential Applications Consumer applications charger Adapter TV power supply Lighting Applications Connected and smart lighting for IoT Home appliances

Combining excellent performance and ease-of-use

CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).


Summary of Features

Best-fit performance superjunction technology

  • Enabling lower MOSFET chip temperature
  • Leading to higher e iciency comparedto previous technologies
  • Allowing improved form factors and slim designs

Cost-effective package solution

  • Drop-in replacement for DPAK atcompetitive cost
  • Space savings in designs with lowpower dissipation; enabling smaller form factors
  • Comparable thermal behavior to DPAK

Best-in-class price/performance ratio

  • Attractive price position for high performance technology

Potential Applications

Consumer applications

  • charger
  • Adapter
  • TV power supply
  • Lighting

Applications

  • Connected and smart lighting for IoT
  • Home appliances
Supplier's Site Datasheet
Transistors - IPN70R1K4P7S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPN70R1K4P7S
Transistors IPN70R1K4P7S
700V 4A 6.2W 1.4Ω@10V,700mA 3.5V@40uA 1 N-Channel SOT-223-3 MOSFETs ROHS

700V 4A 6.2W 1.4Ω@10V,700mA 3.5V@40uA 1 N-Channel SOT-223-3 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPN70R1K4P7S
Triode/MOS Tube/Transistor >> MOSFETs IPN70R1K4P7S
700V 4A 6.2W 1.4Ω@10V,700mA 3.5V@40uA N Channel SOT-223-3 MOSFETs ROHS

700V 4A 6.2W 1.4Ω@10V,700mA 3.5V@40uA N Channel SOT-223-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPN70R1K4P7S IPN70R1K4P7S IPN70R1K4P7S
Product Name 500V-950V N-Channel Power MOSFET Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 1.4 ohms 1.4 ohms
QG 4.7 nC
TJ -40 to 150 C (-40 to 302 F)
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