Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPN60R2K0PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R2K0PFD7S in a SOT-223 package features RDS(on) of 2,000mOhm resulting in low switching losses. The IPN60R2K0PFD7S comes with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. The industry-leading SMD package offering adds to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications General purpose motor drive - variating frequency and voltage Industrial Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPN60R2K0PFD7S - Infineon Technologies AG
    Infineon Technologies AG
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Description
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R2K0PFD7S in a SOT-223 package features RDS(on) of 2,000mOhm resulting in low switching losses. The IPN60R2K0PFD7S comes with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. The industry-leading SMD package offering adds to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications General purpose motor drive - variating frequency and voltage Industrial Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPN60R2K0PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-SOT223 package, measuring 6.70mm x 7.30mm, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It features a maximum on-state resistance of 2000 mΩ, a pulsed drain current of 4.5 A, and an integrated fast body diode with a maximum commutation speed of 1300 A/μs. The device has a gate charge of 3.8 nC, an avalanche energy rating of 5 mJ for single pulse, and meets JEDEC standards for qualification. It supports an operating junction temperature from -40°C to 150°C and has an ESD rating of Class 2 (HBM).

Datasheet Summary
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The IPN60R2K0PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-SOT223 package, measuring 6.70mm x 7.30mm, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It features a maximum on-state resistance of 2000 mΩ, a pulsed drain current of 4.5 A, and an integrated fast body diode with a maximum commutation speed of 1300 A/μs. The device has a gate charge of 3.8 nC, an avalanche energy rating of 5 mJ for single pulse, and meets JEDEC standards for qualification. It supports an operating junction temperature from -40°C to 150°C and has an ESD rating of Class 2 (HBM).

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500V-950V N-Channel Power MOSFET - IPN60R2K0PFD7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPN60R2K0PFD7S
500V-950V N-Channel Power MOSFET IPN60R2K0PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R2K0PFD7S in a SOT-223 package features RDS(on) of 2,000mOhm resulting in low switching losses. The IPN60R2K0PFD7S comes with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. The industry-leading SMD package offering adds to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications General purpose motor drive - variating frequency and voltage Industrial Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R2K0PFD7S in a SOT-223 package features RDS(on) of 2,000mOhm resulting in low switching losses. The IPN60R2K0PFD7S comes with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. The industry-leading SMD package offering adds to PCB space savings and simplifies manufacturing.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • High density Charger and Adapter
  • USB PD
  • Fridge
  • Fans
  • Pumps

Applications

  • General purpose motor drive - variating frequency and voltage
  • Industrial

Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPN60R2K0PFD7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 2 ohms
QG 3.8 nC
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