Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPN60R1K5PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Home appliances Refrigerators and freezers Designers who used this product also designed with 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPN60R1K5PFD7S - Infineon Technologies AG
    Infineon Technologies AG
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Description
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Home appliances Refrigerators and freezers Designers who used this product also designed with 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPN60R1K5PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-SOT223 package, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It has a maximum on-state resistance of 1500 mΩ, a pulsed drain current of 6.0 A, and a gate charge of 4.6 nC. The device features an integrated fast body diode with a maximum commutation speed of 1300 A/µs and is qualified to JEDEC standards. It supports an operating junction temperature from -40°C to 150°C and has an ESD rating of 2 kV (HBM).

Datasheet Summary
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The IPN60R1K5PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-SOT223 package, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It has a maximum on-state resistance of 1500 mΩ, a pulsed drain current of 6.0 A, and a gate charge of 4.6 nC. The device features an integrated fast body diode with a maximum commutation speed of 1300 A/µs and is qualified to JEDEC standards. It supports an operating junction temperature from -40°C to 150°C and has an ESD rating of 2 kV (HBM).

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500V-950V N-Channel Power MOSFET - IPN60R1K5PFD7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPN60R1K5PFD7S
500V-950V N-Channel Power MOSFET IPN60R1K5PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Home appliances Refrigerators and freezers Designers who used this product also designed with 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package

This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • High density Charger and Adapter
  • USB PD
  • Fridge
  • Fans
  • Pumps

Applications

  • Home appliances
  • Refrigerators and freezers

Designers who used this product also designed with


  • 2EDR8259X |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPN60R1K5PFD7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1.5 ohms
QG 4.6 nC
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