The IPL65R115CFD7 is a 650 V CoolMOS™ CFD7 superjunction MOSFET designed for resonant switching topologies such as LLC and phase-shift full-bridge converters. It is packaged in a PG-VSON-4 (ThinPAK 8x8) format and features a maximum drain-source breakdown voltage of 650 V, a continuous drain current of 24 A at 25°C case temperature, and a typical on-state resistance of 115 mΩ at 25°C. The device exhibits a gate charge of 41 nC, a fast body diode with a maximum recovery current di/dt of 1300 A/µs, and is fully qualified to JEDEC standards for industrial applications. It operates with a junction temperature range of -40°C to 150°C and has a thermal resistance from junction to case of 0.87 °C/W. The part meets reliability standards for high power density and enhanced efficiency in industrial SMPS, server, telecom, EV charging, and solar applications.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPL65R115CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPL65R115CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1150 ohms |
| QG | 41 nC |
