Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPL60R2K1C6SATMA1

Description
Win Source Part Number: 967802-IPL60R2K1C6SA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ C6 Package: Tape & Reel (TR) Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 21.6W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSON-8-2 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: INFINFIPL60R2K1C6SAT MA1,2156-IPL60R2K1C6 SATMA1,SP001163026 Base Product Number: IPL60R Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 967802-IPL60R2K1C6SA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ C6 Package: Tape & Reel (TR) Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 21.6W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSON-8-2 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: INFINFIPL60R2K1C6SAT MA1,2156-IPL60R2K1C6 SATMA1,SP001163026 Base Product Number: IPL60R Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 967802-IPL60R2K1C6SATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
967802-IPL60R2K1C6SATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 967802-IPL60R2K1C6SATMA1
Win Source Part Number: 967802-IPL60R2K1C6SA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ C6 Package: Tape & Reel (TR) Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 21.6W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSON-8-2 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: INFINFIPL60R2K1C6SAT MA1,2156-IPL60R2K1C6 SATMA1,SP001163026 Base Product Number: IPL60R Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 967802-IPL60R2K1C6SATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ C6
Package: Tape & Reel (TR)
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSON-8-2
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPL60R2K1C6SATMA1,2156-IPL60R2K1C6SATMA1,SP001163026
Base Product Number: IPL60R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPL60R2K1C6SATMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPL60R2K1C6SATMA1-ND
Single FETs, MOSFETs IPL60R2K1C6SATMA1-ND
N-Channel 600V 2.3A (Tc) 21.6W (Tc) Surface Mount PG-TSON-8-2

N-Channel 600V 2.3A (Tc) 21.6W (Tc) Surface Mount PG-TSON-8-2

Buy Now Datasheet
Singapore, Singapore
600V 2.3A MOSFET Transistor
278-IPL60R2K1C6SATMA1
600V 2.3A MOSFET Transistor 278-IPL60R2K1C6SATMA1
MOSFET N-CH 600V 2.3A THIN-PAK Product overview: IPL60R2K1C6SATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPL60R2K1C6SATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 2.3A THIN-PAK Product overview: IPL60R2K1C6SATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPL60R2K1C6SATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPL60R2K1C6SATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPL60R2K1C6SATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPL60R2K1C6SATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPL60R2K1C6SATMA1
MOSFET N-CH 600V 2.3A THIN-PAK

MOSFET N-CH 600V 2.3A THIN-PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 967802-IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1-ND 278-IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 2.3A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 21600 milliwatts 21600 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3 8-PowerTDFN Tape & Reel (TR) TSON8 8-PowerTDFN
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