Win Source Part Number: 967802-IPL60R2K1C6SA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C6
Package: Tape & Reel (TR)
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSON-8-2
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPL60R2K1C6SAT
Base Product Number: IPL60R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 2.3A (Tc) 21.6W (Tc) Surface Mount PG-TSON-8-2
MOSFET N-CH 600V 2.3A THIN-PAK Product overview: IPL60R2K1C6SATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPL60R2K1C6SATMA
Power Field-Effect Transistor
MOSFET N-CH 600V 2.3A THIN-PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 967802-IPL60R2K1C6SATMA1 | IPL60R2K1C6SATMA1-ND | 278-IPL60R2K1C6SATMA1 | IPL60R2K1C6SATMA1 | IPL60R2K1C6SATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 2.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | |||
| PD | 21600 milliwatts | 21600 milliwatts | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| Package Type | SOT3 | 8-PowerTDFN | Tape & Reel (TR) | TSON8 | 8-PowerTDFN |