Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPL60R185C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Adapters and chargers Information & communications technology Smart speaker designs Wired Communication EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSC009NE2LS | N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs ICE2QR2280G | CoolSET™ Quasi Resonant BSC600N25NS3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Adapters and chargers Information & communications technology Smart speaker designs Wired Communication EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSC009NE2LS | N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs ICE2QR2280G | CoolSET™ Quasi Resonant BSC600N25NS3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPL60R185C7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPL60R185C7
500V-950V N-Channel Power MOSFET IPL60R185C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Adapters and chargers Information & communications technology Smart speaker designs Wired Communication EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSC009NE2LS | N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs ICE2QR2280G | CoolSET™ Quasi Resonant BSC600N25NS3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDN7524R | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC020N03LS G | N-Channel Power MOSFET 1 2 3 4 5

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

Applications

  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • Information & communications technology
  • Smart speaker designs
  • Wired Communication

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1EDN8511B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDN7524R |
    Gate driver ICs
  • BSC010N04LS |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC020N03LS G |
    N-Channel Power MOSFET
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes
  • BSC009NE2LS |
    N-Channel Power MOSFET
  • XDPS2201 |
    Hybrid Flyback ICs
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC600N25NS3 G |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDN7524R |
    Gate driver ICs
  • BSC010N04LS |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC020N03LS G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
PG-VSON-4 MOSFET RoHS - 376-IPL60R185C7 - Utmel Electronic Limited
Hong Kong, China
PG-VSON-4 MOSFET RoHS
376-IPL60R185C7
PG-VSON-4 MOSFET RoHS 376-IPL60R185C7
PG-VSON-4 MOSFET RoHS

PG-VSON-4 MOSFET RoHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Utmel Electronic Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPL60R185C7 376-IPL60R185C7
Product Name 500V-950V N-Channel Power MOSFET PG-VSON-4 MOSFET RoHS
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1850 ohms
QG 24 nC
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