The IPL60R160CFD7 is a 600V CoolMOS™ CFD7 N-channel power MOSFET designed for resonant topologies such as phase-shift full-bridge and LLC converter applications. It is packaged in a PG-VSON-4 case measuring 8mm x 8mm. Key specifications include a maximum drain-source on-state resistance of 160 mΩ, a total gate charge of 31 nC, and a reverse recovery charge of up to 0.9 µC. The device supports a pulsed drain current of 58 A and exhibits a body diode commutation speed of 1300 A/µs. It is fully qualified according to JEDEC for industrial applications and meets thermal performance with a junction-to-case thermal resistance of 1.32 °C/W. The device supports a maximum operating junction temperature of 150 °C and is suitable for high-efficiency, high-power-density power supplies in server, telecom, and EV charging systems.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPL60R160CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPL60R160CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1600 ohms |
| QG | 31 nC |
