The IPL60R140CFD7 is a 600V CoolMOS™ CFD7 power MOSFET designed for resonant switching applications such as phase-shift full-bridge and LLC topologies in server, telecom, and EV charging systems. It is packaged in a PG-VSON-4 surface-mount format with a pulsed drain current rating of 66 A, a maximum on-resistance of 140 mΩ, a typical gate charge of 35 nC, and a reverse recovery charge of 35 nC. The device features an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and meets JEDEC industrial qualification standards. Its low FOM and high ruggedness support high power density and efficiency in soft-switching circuits.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPL60R140CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1400 ohms |
| QG | 35 nC |
