Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPL60R105P7

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers General purpose motor drive - variating frequency and voltage Smart speaker designs Solutions for inductive wireless charging above 50 W Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 1 2 3
  • 500V-950V N-Channel Power MOSFET - IPL60R105P7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers General purpose motor drive - variating frequency and voltage Smart speaker designs Solutions for inductive wireless charging above 50 W Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 1 2 3
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Datasheet
Datasheet Summary
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The IPL60R105P7 is a 600V CoolMOS™ P7 superjunction MOSFET designed for high-efficiency switching applications such as PFC and LLC resonant converters. It is packaged in a PG-VSON-4 case with a footprint optimized for compact designs. The device has a maximum on-state resistance of 105 mΩ at 25°C, a pulsed drain current of 100 A, and an enhanced body diode capable of 800 A/µs commutation speed. It features ESD robustness exceeding 2 kV (HBM) and is fully qualified per JEDEC standards for industrial applications. Thermal resistance from junction to case is 0.91 °C/W, and junction temperature operates from -40 °C to 150 °C. The MOSFET meets AEC-Q200 qualifications for automotive reliability.

Datasheet Summary
Powered by GS/AI

The IPL60R105P7 is a 600V CoolMOS™ P7 superjunction MOSFET designed for high-efficiency switching applications such as PFC and LLC resonant converters. It is packaged in a PG-VSON-4 case with a footprint optimized for compact designs. The device has a maximum on-state resistance of 105 mΩ at 25°C, a pulsed drain current of 100 A, and an enhanced body diode capable of 800 A/µs commutation speed. It features ESD robustness exceeding 2 kV (HBM) and is fully qualified per JEDEC standards for industrial applications. Thermal resistance from junction to case is 0.91 °C/W, and junction temperature operates from -40 °C to 150 °C. The MOSFET meets AEC-Q200 qualifications for automotive reliability.

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500V-950V N-Channel Power MOSFET - IPL60R105P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPL60R105P7
500V-950V N-Channel Power MOSFET IPL60R105P7
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers General purpose motor drive - variating frequency and voltage Smart speaker designs Solutions for inductive wireless charging above 50 W Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs BSS138N | Small signal/small power MOSFET IDD06SG60C | CoolSiC™ Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDB8259Y | Gate driver ICs 1 2 3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Adapters and chargers
  • General purpose motor drive - variating frequency and voltage
  • Smart speaker designs
  • Solutions for inductive wireless charging above 50 W
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSS138N |
    Small signal/small power MOSFET
  • IDD06SG60C |
    CoolSiC™ Schottky Diodes
  • BSS131 |
    Small signal/small power MOSFET
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSS138N |
    Small signal/small power MOSFET
  • IDD06SG60C |
    CoolSiC™ Schottky Diodes
  • BSS131 |
    Small signal/small power MOSFET
  • 2EDB8259Y |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPL60R105P7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1050 ohms
QG 45 nC
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