Power Field-Effect Transistor
N-Channel 900V 5.1A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
MOSFET, N-CH, 900V, 5.1A, 150DEG C, 83W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 900V 5.1A TO262-3
| Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPI90R1K2C3XKSA2 | IPI90R1K2C3XKSA2-ND | 02AH6891 | IPI90R1K2C3XKSA2 | IPI90R1K2C3XKSA2 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 900V, 5.1A, 150Deg C, 83W; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Package Type | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
