Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI90R1K2C3 IPI90R1K2C3

Manufacturer: Infineon Technologies
Win Source Part Number: 083587-IPI90R1K2C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 310μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 710pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N-CH 900V 5.1A TO-262 Product overview: IPI90R1K2C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 5.1A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI90R1K2C3 can be used for catalog matching and distributor lookup.