Manufacturer: Infineon Technologies
Win Source Part Number: 1045928-IPI600N25N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4V @ 90μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 2350pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
N-Channel 250V 25A (Tc) 136W (Tc) Through Hole PG-TO262-3
IPI600N25 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 250V 25A TO262-3
MOSFET N-CH 250V 25A TO262-3
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1045928-IPI600N25N3GAKSA1 | IPI600N25N3GAKSA1-ND | IPI600N25N3GAKSA1 | IPI600N25N3GAKSA1 | 376-IPI600N25N3GAKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI600N25N3GAKSA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 250V 25A TO262-3 | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | ||||
| PD | 136000 milliwatts | 136000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 | 29 nC @ 10 V |
