Infineon Technologies AG Single FETs, MOSFETs IPI120N06S402AKSA2

N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3-1

OptlMOS N-Channel Power MOSFET

Win Source Part Number: 1378630-IPI120N06S402AKSA2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: OptiMOS™
Package: Tube
Product Status: Not For New Designs
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Base Product Number: IPI120
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Power Dissipation (Max): 188W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

MOSFET N-CH 60V 120A TO262-3 Product overview: IPI120N06S402AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI120N06S402AKSA2 can be used for catalog matching and distributor lookup.