Manufacturer: Infineon Technologies
Win Source Part Number: 776876-IPI076N12N3GA
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: IPI076N12N3GAKSA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO262-3
Channel Type Type: N
Drain Source Voltage: 120V
Vgs(th) (Maximum) @ Id: 4V @ 130μA
Gate Charge (Qg) (Maximum) @ Vgs: 101nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6640pF @ 60V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 188W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.6 mOhm @ 100A, 10V
Introduction Date: July 09, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
N-Channel 120V 100A (Tc) 188W (Tc) Through Hole PG-TO262-3
MOSFET N-CH 120V 100A TO262-3
MOSFET N-CH 120V 100A TO262-3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 776876-IPI076N12N3GAKSA1 | IPI076N12N3GAKSA1-ND | IPI076N12N3GAKSA1 | IPI076N12N3GAKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI076N12N3GAKSA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 188000 milliwatts | 188000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | SOT3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Packing Method | Tube; Tube | Tube; Tube |
