Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI072N10N3GXKSA1 IPI072N10N3GXKSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 776875-IPI072N10N3GXKSA1
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: IPI072N10N3GXKSA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO262-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.5V @ 90μA
Gate Charge (Qg) (Maximum) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4910pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): 2SK3479-S-A; 2SK3479-S-AZ; 2SK3479-S; SUV85N10-10;
Introduction Date: October 21, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

N-Channel 100V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3

IPI072N10 - 12V-300V N-Channel Power MOSFET