N-channel MOSFET in PG-TO262-3 package for switching applications, rated for 100 V drain-source voltage, 100 A continuous drain current at 25°C, and 214 W power dissipation. Features a maximum on-resistance of 6.4 mΩ at 10 A and 10 V gate-source voltage, a typical gate threshold voltage of 2.2 V, and a reverse diode with a forward voltage of 1.2 V at 100 A. Complies with RoHS and is qualified for automotive applications under AEC-Q200. Operating junction temperature range is -55°C to 175°C.
N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | IPI06CN10NG-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
