Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI041N12N3G IPI041N12N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 040639-IPI041N12N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 211nC @ 10V
Max Input Capacitance: 13800pF @ 60V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

MOSFET N-CH 120V 120A TO262-3 Product overview: IPI041N12N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 120A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI041N12N3G can be used for catalog matching and distributor lookup.