The IPG20N06S2L-35A is a dual N-channel logic level enhancement mode MOSFET designed for automotive applications. It is packaged in a PG-TDSON-8 case with an operating temperature range of -55°C to +175°C and is AEC-Q101 qualified. The device has a continuous drain current of 20 A per channel, a drain-source breakdown voltage of 55 V, and a maximum on-state resistance of 44 mΩ at 4.5 V gate-source voltage. It supports 100% avalanche testing, is RoHS compliant, and has a peak reflow temperature rating of 260°C. Thermal resistance from junction to case is 2.3 K/W. The part features isolated leadframes and is feasible for automatic optical inspection.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186229-IPG20N06S2L-
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPG20N06S2L-35A | 1186229-IPG20N06S2L-35A |
| Product Name | Automotive MOSFET | Electronic Surplus - IPG20N06S2L-35A |
| Polarity | N+N | |
| Transistor Technology / Material | Si/SiC | |
| VGS(off) | 1.6 volts | |
| rDS(on) | 0.0350 ohms |