Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6 IPF129N20NM6

Description
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance. The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS. Summary of Features Compared to previous 200 V technology: 42 % lower RDS(on) 89% lower Qrr(typ) More than 3 times softer diode Improved capacitance linearity Improved SOA Pb-free plating and RoHS compliant Benefits Low conduction losses Low switching losses Stable operation with improved EMI Less paralleling required Better current sharing when paralleling Environmentally friendly Potential Applications Drives SMPS Solar BMS Audio
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Description
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance. The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS. Summary of Features Compared to previous 200 V technology: 42 % lower RDS(on) 89% lower Qrr(typ) More than 3 times softer diode Improved capacitance linearity Improved SOA Pb-free plating and RoHS compliant Benefits Low conduction losses Low switching losses Stable operation with improved EMI Less paralleling required Better current sharing when paralleling Environmentally friendly Potential Applications Drives SMPS Solar BMS Audio
Request a Quote Datasheet

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6 - IPF129N20NM6 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6
IPF129N20NM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6 IPF129N20NM6
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance. The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS. Summary of Features Compared to previous 200 V technology: 42 % lower RDS(on) 89% lower Qrr(typ) More than 3 times softer diode Improved capacitance linearity Improved SOA Pb-free plating and RoHS compliant Benefits Low conduction losses Low switching losses Stable operation with improved EMI Less paralleling required Better current sharing when paralleling Environmentally friendly Potential Applications Drives SMPS Solar BMS Audio

OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package

IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.

The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.


Summary of Features

Compared to previous 200 V technology:

  • 42 % lower RDS(on)
  • 89% lower Qrr(typ)
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA

Pb-free plating and RoHS compliant


Benefits

  • Low conduction losses
  • Low switching losses
  • Stable operation with improved EMI
  • Less paralleling required
  • Better current sharing when paralleling
  • Environmentally friendly

Potential Applications

  • Drives
  • SMPS
  • Solar
  • BMS
  • Audio
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF129N20NM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0129 ohms
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