The IPF129N20NM6 is an N-channel power MOSFET in a PG-TO263-7 (D²PAK 7-pin) package, rated for 200 V drain-source voltage and 87 A continuous drain current. It features a maximum on-state resistance of 12.9 mΩ at 10 V gate-source voltage and 65 A drain current, with a total gate charge of 56 nC and reverse recovery charge of 271 nC at 1000 A/μs. The device operates at up to 175 °C junction temperature and is 100% avalanche tested with a single-pulse avalanche energy rating of 258 mJ. It is RoHS compliant, halogen-free per IEC 61249-2-21, and MSL 1 classified per J-STD-020.
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package
IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.
The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.
Summary of Features
Compared to previous 200 V technology:
Pb-free plating and RoHS compliant
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF129N20NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF129N20NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0129 ohms |
