Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S IPF050N10NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S - IPF050N10NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
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Datasheet
Datasheet Summary
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The IPF050N10NF2S is a 100 V N-channel power MOSFET in a PG-TO263-7 package, measuring 9.00 to 9.40 mm in length and 9.68 to 10.08 mm in width, with a 7-pin configuration. It has a maximum drain-source on-state resistance of 5.05 mΩ at 25 °C and can handle a continuous drain current of up to 117 A at a case temperature of 25 °C. The device is avalanche-tested, rated for junction temperatures from -55 °C to 175 °C, and complies with RoHS and is halogen-free per IEC 61249-2-21. Its thermal resistance from junction to case is 1.0 °C/W.

Datasheet Summary
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The IPF050N10NF2S is a 100 V N-channel power MOSFET in a PG-TO263-7 package, measuring 9.00 to 9.40 mm in length and 9.68 to 10.08 mm in width, with a 7-pin configuration. It has a maximum drain-source on-state resistance of 5.05 mΩ at 25 °C and can handle a continuous drain current of up to 117 A at a case temperature of 25 °C. The device is avalanche-tested, rated for junction temperatures from -55 °C to 175 °C, and complies with RoHS and is halogen-free per IEC 61249-2-21. Its thermal resistance from junction to case is 1.0 °C/W.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S - IPF050N10NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S
IPF050N10NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S IPF050N10NF2S
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles

StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF050N10NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF050N10NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0050 ohms
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