IPF048N15NM6 is an N-channel MOSFET for power conversion, housed in a PG-TO263-7 package with a drain terminal connected to a tab. It has a maximum drain-source voltage of 150 V, a maximum continuous drain current of 146 A at 25 °C, and a maximum on-resistance of 4.8 mΩ. The device supports avalanche energies up to 298 mJ at 46 A drain current and is fully qualified according to JEDEC for industrial applications. Thermal resistance from junction to case is 0.64 °C/W, and it is rated for operating temperatures from -55 °C to 175 °C. The package is RoHS compliant and halogen-free according to IEC61249-2-21.
IPF048N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF048N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF048N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0048 ohms |
