IPF042N10NF2S is an N-channel silicon power MOSFET rated for 100 V drain-source voltage, with a maximum on-state resistance of 4.25 mΩ and a continuous drain current of 198 A at a case temperature of 25 °C. It is housed in a PG-TO263-7 package and is avalanche-tested, RoHS compliant, and halogen-free according to IEC61249-2-21. The device is qualified to JEDEC standards.
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF042N10NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF042N10NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0043 ohms |