Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6 IPF031N13NM6

Description
OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs. Summary of Features Compared to OptiMOS™ 5 150 V Up to 53% lower ON-state-resistance Up to 38% lower gate threshold voltage spread Up to 70% reduction of reverse recovery charge (Qrr) Up to 45% lower peak reverse recovery current (-Irrm) Benefits System cost reduction Lower conduction losses and increased output power Lower EMI Less paralleling required Higher power density designs Potential Applications E-forklift LEV E-scooters Power tools Gardening tools UPS
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6 - IPF031N13NM6 - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs. Summary of Features Compared to OptiMOS™ 5 150 V Up to 53% lower ON-state-resistance Up to 38% lower gate threshold voltage spread Up to 70% reduction of reverse recovery charge (Qrr) Up to 45% lower peak reverse recovery current (-Irrm) Benefits System cost reduction Lower conduction losses and increased output power Lower EMI Less paralleling required Higher power density designs Potential Applications E-forklift LEV E-scooters Power tools Gardening tools UPS
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Datasheet
Datasheet Summary
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IPF031N13NM6 is an N-channel power MOSFET designed for motor drives and battery-powered applications, packaged in a PG-TO263-7 case with a maximum drain-source voltage of 135 V, continuous drain current of 207 A, and maximum on-resistance of 3.1 mΩ. It operates at up to 175°C, is 100% avalanche tested, and meets JEDEC industrial qualification standards. The device is RoHS compliant, halogen-free per IEC61249-2-21, and has MSL 1 moisture sensitivity rating.

Datasheet Summary
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IPF031N13NM6 is an N-channel power MOSFET designed for motor drives and battery-powered applications, packaged in a PG-TO263-7 case with a maximum drain-source voltage of 135 V, continuous drain current of 207 A, and maximum on-resistance of 3.1 mΩ. It operates at up to 175°C, is 100% avalanche tested, and meets JEDEC industrial qualification standards. The device is RoHS compliant, halogen-free per IEC61249-2-21, and has MSL 1 moisture sensitivity rating.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6 - IPF031N13NM6 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6
IPF031N13NM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6 IPF031N13NM6
OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs. Summary of Features Compared to OptiMOS™ 5 150 V Up to 53% lower ON-state-resistance Up to 38% lower gate threshold voltage spread Up to 70% reduction of reverse recovery charge (Qrr) Up to 45% lower peak reverse recovery current (-Irrm) Benefits System cost reduction Lower conduction losses and increased output power Lower EMI Less paralleling required Higher power density designs Potential Applications E-forklift LEV E-scooters Power tools Gardening tools UPS

OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin

This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V.

This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.


Summary of Features

Compared to OptiMOS™ 5 150 V

  • Up to 53% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Benefits

  • System cost reduction
  • Lower conduction losses and increased output power
  • Lower EMI
  • Less paralleling required
  • Higher power density designs

Potential Applications

  • E-forklift
  • LEV
  • E-scooters
  • Power tools
  • Gardening tools
  • UPS
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF031N13NM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF031N13NM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0031 ohms
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