OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V.
This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.
Summary of Features
Compared to OptiMOS™ 5 150 V
Up to 53% lower ON-state-resistance
Up to 38% lower gate threshold voltage spread
Up to 70% reduction of reverse recovery charge (Qrr)
Up to 45% lower peak reverse recovery current (-Irrm)
Benefits
System cost reduction
Lower conduction losses and increased output power
Lower EMI
Less paralleling required
Higher power density designs
Potential Applications
E-forklift
LEV
E-scooters
Power tools
Gardening tools
UPS
OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V.
This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.
Summary of Features
Compared to OptiMOS™ 5 150 V
- Up to 53% lower ON-state-resistance
- Up to 38% lower gate threshold voltage spread
- Up to 70% reduction of reverse recovery charge (Qrr)
- Up to 45% lower peak reverse recovery current
(-Irrm)
Benefits
- System cost reduction
- Lower conduction losses and increased output power
- Lower EMI
- Less paralleling required
- Higher power density designs
Potential Applications
- E-forklift
- LEV
- E-scooters
- Power tools
- Gardening tools
- UPS
