IPF026N15NM6 is an N-channel silicon MOSFET designed for power applications, packaged in a PG-TO263-7 (D²PAK 7-pin) case measuring 9.05 to 9.45 mm in length, 9.80 to 10.20 mm in width, and 14.90 to 15.10 mm in height. It has a drain-source voltage rating of 150 V, a maximum continuous drain current of 239 A at 25 °C, and a maximum on-state resistance of 2.6 mΩ at 10 V gate drive. The device supports a peak pulsed drain current of 956 A and is 100% avalanche tested with an avalanche energy rating of 1012 mJ. Thermal resistance from junction to case is 0.38 °C/W, and it operates over a temperature range of -55 °C to 175 °C. It is RoHS compliant, halogen-free per IEC 61249-2-21, MSL 1 rated per J-STD-020, and fully qualified per JEDEC for industrial applications.
OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 7-pin package
IPF026N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF026N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF026N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0026 ohms |
