Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6 IPF019N12NM6

Description
Fully optimized best-in-class performance at 120 V This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance. IPF019N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Compared to the next best alternative, the technology features: up to 51% better RDS(on) up to 35% better FOMg up to 6% better Qrr up to 45% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and gardening tools Adapters and fast chargers Solar Telecom Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6 - IPF019N12NM6 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Fully optimized best-in-class performance at 120 V This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance. IPF019N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Compared to the next best alternative, the technology features: up to 51% better RDS(on) up to 35% better FOMg up to 6% better Qrr up to 45% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and gardening tools Adapters and fast chargers Solar Telecom Light electric vehicles
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Datasheet
Datasheet Summary
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The IPF019N12NM6 is an N-channel power MOSFET designed for high-frequency switching applications, featuring a D²-PAK-7 package with a 1.9 mΩ maximum on-resistance and a continuous drain current of 254 A at 25°C. It operates at a maximum junction temperature of 175°C and is rated for 120 V drain-source voltage. The device supports a single-pulse avalanche energy of 1406 mJ and exhibits a low reverse recovery charge of 336 nC at 1000 A/µs. It is RoHS compliant, halogen-free per IEC 61249-2-21, and classified as MSL 1 per J-STD-020. Fully qualified per JEDEC for industrial applications.

Datasheet Summary
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The IPF019N12NM6 is an N-channel power MOSFET designed for high-frequency switching applications, featuring a D²-PAK-7 package with a 1.9 mΩ maximum on-resistance and a continuous drain current of 254 A at 25°C. It operates at a maximum junction temperature of 175°C and is rated for 120 V drain-source voltage. The device supports a single-pulse avalanche energy of 1406 mJ and exhibits a low reverse recovery charge of 336 nC at 1000 A/µs. It is RoHS compliant, halogen-free per IEC 61249-2-21, and classified as MSL 1 per J-STD-020. Fully qualified per JEDEC for industrial applications.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6 - IPF019N12NM6 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6
IPF019N12NM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6 IPF019N12NM6
Fully optimized best-in-class performance at 120 V This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance. IPF019N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Compared to the next best alternative, the technology features: up to 51% better RDS(on) up to 35% better FOMg up to 6% better Qrr up to 45% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and gardening tools Adapters and fast chargers Solar Telecom Light electric vehicles

Fully optimized best-in-class performance at 120 V

This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance. IPF019N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.


Summary of Features

Compared to OptiMOS™ 3, the technology features:

  • up to 58% better RDS(on)
  • up to 66% better FOMg
  • up to 90% better Qrr
  • up to 35% better FOMoss

Compared to the next best alternative, the technology features:

  • up to 51% better RDS(on)
  • up to 35% better FOMg
  • up to 6% better Qrr
  • up to 45% better FOMoss

Benefits

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

Potential Applications

  • Power and gardening tools
  • Adapters and fast chargers
  • Solar
  • Telecom
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF019N12NM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF019N12NM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0019 ohms
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