IPF018N10NM5LF2 is a 100 V N-channel MOSFET in a D²PAK-7 package designed for hot-swap, battery protection, and e-fuse applications. It has a maximum on-resistance of 1.8 mΩ and a continuous drain current rating of 259 A at 25 °C. The device is avalanche tested, has a wide safe operating area, and is RoHS compliant and halogen-free. It is qualified for industrial applications per JEDEC JESD47, JESD22, and J-STD-020 standards.
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin
The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability.
Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS).
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF018N10NM5LF2 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0018 ohms |