Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2 IPF018N10NM5LF2

Description
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) Lower IGSS compared to Linear FET Optimized transfer characteristic Benefits Rugged linear mode operation Low conduction losses Improved gate driver compatibility Better current sharing Applications Battery management systems (BMS) Server power supply units (PSU) Telecommunication infrastructure Complementary products XDP710-002 XDP700
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Description
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) Lower IGSS compared to Linear FET Optimized transfer characteristic Benefits Rugged linear mode operation Low conduction losses Improved gate driver compatibility Better current sharing Applications Battery management systems (BMS) Server power supply units (PSU) Telecommunication infrastructure Complementary products XDP710-002 XDP700
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Datasheet
Datasheet Summary
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IPF018N10NM5LF2 is a 100 V N-channel MOSFET in a D²PAK-7 package designed for hot-swap, battery protection, and e-fuse applications. It has a maximum on-resistance of 1.8 mΩ and a continuous drain current rating of 259 A at 25 °C. The device is avalanche tested, has a wide safe operating area, and is RoHS compliant and halogen-free. It is qualified for industrial applications per JEDEC JESD47, JESD22, and J-STD-020 standards.

Datasheet Summary
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IPF018N10NM5LF2 is a 100 V N-channel MOSFET in a D²PAK-7 package designed for hot-swap, battery protection, and e-fuse applications. It has a maximum on-resistance of 1.8 mΩ and a continuous drain current rating of 259 A at 25 °C. The device is avalanche tested, has a wide safe operating area, and is RoHS compliant and halogen-free. It is qualified for industrial applications per JEDEC JESD47, JESD22, and J-STD-020 standards.

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2 - IPF018N10NM5LF2 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2
IPF018N10NM5LF2
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2 IPF018N10NM5LF2
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) Lower IGSS compared to Linear FET Optimized transfer characteristic Benefits Rugged linear mode operation Low conduction losses Improved gate driver compatibility Better current sharing Applications Battery management systems (BMS) Server power supply units (PSU) Telecommunication infrastructure Complementary products XDP710-002 XDP700

OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin

The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability.

Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS).


Summary of Features

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • Lower IGSS compared to Linear FET
  • Optimized transfer characteristic

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • Improved gate driver compatibility
  • Better current sharing

Applications

  • Battery management systems (BMS)
  • Server power supply units (PSU)
  • Telecommunication infrastructure

Complementary products

  • XDP710-002
  • XDP700
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF018N10NM5LF2
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF018N10NM5LF2
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0018 ohms
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