Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S IPF016N06NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.65 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S - IPF016N06NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.65 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
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Datasheet
Datasheet Summary
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IPF016N06NF2S is a single N-channel power MOSFET rated for 60 V, packaged in a PG-TO263-7 (D²PAK 7-pin) housing. It has a maximum continuous drain current of 177 A at a case temperature of 100 °C and a maximum drain-source on-state resistance of 1.65 mΩ. The device supports a pulsed drain current up to 920 A and has a total gate charge of 108 nC. It is qualified according to JEDEC standards, RoHS compliant, and halogen-free per IEC61249-2-21. The operating and storage junction temperature ranges from -55 °C to 175 °C.

Datasheet Summary
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IPF016N06NF2S is a single N-channel power MOSFET rated for 60 V, packaged in a PG-TO263-7 (D²PAK 7-pin) housing. It has a maximum continuous drain current of 177 A at a case temperature of 100 °C and a maximum drain-source on-state resistance of 1.65 mΩ. The device supports a pulsed drain current up to 920 A and has a total gate charge of 108 nC. It is qualified according to JEDEC standards, RoHS compliant, and halogen-free per IEC61249-2-21. The operating and storage junction temperature ranges from -55 °C to 175 °C.

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S - IPF016N06NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S
IPF016N06NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S IPF016N06NF2S
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.65 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS

StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package

Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.65 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF016N06NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF016N06NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0017 ohms
QG 108 nC
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