Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S IPF014N08NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S - IPF014N08NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
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Datasheet
Datasheet Summary
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IPF014N08NF2S is an N-channel enhancement mode MOSFET designed for power conversion applications, rated for 80 V drain-source breakdown voltage and 282 A continuous drain current. It is packaged in a PG-TO263-7 (D²PAK 7-pin) case with dimensions of 9.00-9.40 mm in length, 9.68-10.08 mm in width, and 14.61-15.88 mm in height. The maximum on-state resistance is 1.4 mΩ at 25 °C, with a total gate charge of 255 nC. The device is avalanche-tested, RoHS compliant, and halogen-free per IEC 61249-2-21. Thermal resistance from junction to case is 0.5 °C/W, and junction-to-ambient is 40 °C/W on a 6 cm² copper PCB area. Operating junction temperature ranges from -55 °C to 175 °C.

Datasheet Summary
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IPF014N08NF2S is an N-channel enhancement mode MOSFET designed for power conversion applications, rated for 80 V drain-source breakdown voltage and 282 A continuous drain current. It is packaged in a PG-TO263-7 (D²PAK 7-pin) case with dimensions of 9.00-9.40 mm in length, 9.68-10.08 mm in width, and 14.61-15.88 mm in height. The maximum on-state resistance is 1.4 mΩ at 25 °C, with a total gate charge of 255 nC. The device is avalanche-tested, RoHS compliant, and halogen-free per IEC 61249-2-21. Thermal resistance from junction to case is 0.5 °C/W, and junction-to-ambient is 40 °C/W on a 6 cm² copper PCB area. Operating junction temperature ranges from -55 °C to 175 °C.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S - IPF014N08NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S
IPF014N08NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S IPF014N08NF2S
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles

StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPF014N08NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF014N08NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0014 ohms
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