IPF013N04NF2S is a 40 V N-channel power MOSFET in a PG-TO263-7 package, measuring 9.40 mm x 10.08 mm x 15.88 mm, with a drain-source on-state resistance of 1.35 mΩ max, continuous drain current of 184 A at TC=100 °C, and pulsed drain current of 956 A. It has a thermal resistance from junction to case of 0.65 °C/W and supports operating temperatures from -55 °C to 175 °C. The device is RoHS compliant and halogen-free per IEC61249-2-21.
StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK 7-pin package
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF013N04NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF013N04NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0014 ohms |
| QG | 106 nC |
