IPF012N06NF2S is a single N-channel power MOSFET rated for 60 V drain-source voltage, housed in a PG-TO263-7 package. It has a maximum on-state resistance of 1.2 mΩ, a continuous drain current of 221 A at 100 °C case temperature, and a pulsed drain current of 1152 A. The device complies with JEDEC standards and is halogen-free according to IEC61249-2-21. Its gate-source voltage range is ±20 V, and it supports an operating temperature from -55 °C to 175 °C.
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPF012N06NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPF012N06NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0012 ohms |
| QG | 155 nC |
