The IPDQ65R099CFD7 is a 650 V CoolMOS™ CFD7 superjunction N-channel MOSFET designed for high-efficiency resonant switching applications such as LLC and phase-shift full-bridge topologies in server, telecom, EV charging, and solar systems. It is packaged in a PG-HDSOP-22 with dimensions of 15.30 to 15.50 mm length, 14.90 to 15.10 mm width, and 20.86 to 21.06 mm height. The device features a maximum drain-source on-state resistance of 99 mΩ, a pulsed drain current of 82 A, and a body diode di/dt rating of 1300 A/μs. It is fully qualified for industrial applications per JEDEC standards and meets thermal resistance specs of 0.67 °C/W junction-to-case and 62 °C/W junction-to-ambient on minimal PCB footprint. The gate-source voltage withstands ±20 V static and ±30 V dynamic. The part is RoHS compliant and supports high power density with excellent hard commutation ruggedness.
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R099CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ65R099CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ65R099CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0990 ohms |
| QG | 39 nC |
